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Same model may have multiple batches, images only for reference.
IPP062NE7N3GXKSA1 Real Image
Same model may have multiple batches, images only for reference.

IPP062NE7N3GXKSA1

Part No IPP062NE7N3GXKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 80A TO220-3
Datasheet
IPP062NE7N3GXKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 75V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.8V @ 70μA
Max Gate Charge 55nC @ 10V
Max Input Capacitance 3840pF @ 37.5V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 136W (Tc)
Maximum Rds On at Id,Vgs 6.2 mOhm @ 73A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO-220-3
Dimension TO-220-3
Win Source Part Number 1045962-IPP062NE7N3GXKSA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IPP062NE7N3GXKSA1 CAD Model

Description

The Infineon Technologies IPP062NE7N3GXKSA1 is an N-channel MOSFET designed for use in discrete semiconductor products.

  • Mounting Type: Through Hole
  • Case: PG-TO-220-3
  • Drain-Source Breakdown Voltage: 75V
  • Continuous Drain Current (25°C): 80A (Tc)
  • Gate-Source Threshold Voltage: 3.8V @ 70μA
  • Maximum Gate Charge: 55nC @ 10V
  • Maximum Input Capacitance: 3840pF @ 37.5V
  • Maximum Rds On (Id,Vgs): 6.2 mOhm @ 73A, 10V
  • Temperature Range: -55°C to 175°C (TJ)
  • Lifecycle Status: Actively Available

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.6553 $57.9355
90+ $1.3583 $122.2470
135+ $1.3159 $177.6465
185+ $1.2734 $235.5790
235+ $1.2310 $289.2850
315+ $1.1036 $347.6340
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MOQ: 35 pcs
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