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Same model may have multiple batches, images only for reference.
IPP100N08S2L07AKSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IPP100N08S2L07AKSA1

Part No IPP100N08S2L07AKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 100A TO220-3
Datasheet
IPP100N08S2L07AKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 75V
Continuous Drain Current at 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 246nC @ 10V
Max Input Capacitance 5400pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 6.8 mOhm @ 80A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3-1
Dimension TO-220-3
Win Source Part Number 1045977-IPP100N08S2L07AKSA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IPP100N08S2L07AKSA1 CAD Model

Description

The Infineon Technologies IPP100N08S2L07AKSA1 is an N-channel MOSFET transistor.

  • Design: Discrete Semiconductor Products
  • Package: PG-TO220-3-1
  • Maximum Power Dissipation: 300W
  • Drain-Source Breakdown Voltage: 75V
  • Continuous Drain Current: 100A @ 25°C
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Maximum Gate Charge: 246nC @ 10V
  • Maximum Input Capacitance: 5400pF @ 25V
  • Maximum Rds On: 6.8 mOhm @ 80A, 10V
  • Supply and Demand Status: Sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
16+ $3.8324 $61.3184
37+ $3.1446 $116.3502
57+ $3.0464 $173.6448
79+ $2.9480 $232.8920
102+ $2.8498 $290.6796
136+ $2.5550 $347.4800
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Availability: 7,000 pieces
MOQ: 16 pcs
Order Increment : 1 pcs
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