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Same model may have multiple batches, images only for reference.
IPP100N10S305AKSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IPP100N10S305AKSA1

Part No IPP100N10S305AKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 100A TO220-3
Datasheet
IPP100N10S305AKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series OptiMOS
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 100V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 240μA
Gate Charge (Qg) (Maximum) @ Vgs 176nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 11570pF @ 25V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 300W (Tc)
Rds On (Maximum) @ Id, Vgs 5.1 mOhm @ 100A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Style Through Hole
Manufacturer Package PG-TO220-3-1
Package TO-220-3
Win Source Part Number 776905-IPP100N10S305AKSA1
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPP100N10S305AKSA1 CAD Model

Description

The Infineon Technologies IPP100N10S305AKSA1 is an OptiMOS MOSFET with a maximum power of 300W.

  • Temperature Range: -55°C to 175°C (TJ)
  • Package: TO-220-3
  • Continuous Drain Current: 100A (Tc)
  • Drain-Source Voltage: 100V
  • Gate Charge: 176nC @ 10V
  • Input Capacitance: 11570pF @ 25V

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28+ $4.1384 $115.8752
44+ $4.0090 $176.3960
60+ $3.8796 $232.7760
77+ $3.7503 $288.7731
104+ $3.3622 $349.6688
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Availability: 1,000 pieces
MOQ: 12 pcs
Order Increment : 1 pcs
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