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IPP120N06S4H1AKSA2

Part No IPP120N06S4H1AKSA2
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 120A TO220-3  /  N-Channel 60 V 120A (Tc) 250W (Tc) Through Hole PG-TO220-3-1
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series Automotive, AEC-Q101, OptiMOS™
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs 270 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 21900 pF @ 25 V
Power Dissipation (Max) 250W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3-1
Package / Case TO-220-3
Base Product Number IPP120N
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names SP001028780,INFINFIPP120N06S4H1AKSA2,2156-IPP120N06S4H1AKSA2
Standard Package 500
Win Source Part Number 1003365-IPP120N06S4H1AKSA2
Ultra Librarian 3D Model Ultra Librarian IPP120N06S4H1AKSA2 CAD Model

Description

The IPP120N06S4H1AKSA2 is a single N-channel MOSFET transistor. IPP120N06S4H1AKSA2 is from Infineon Technologies.

  • Voltage (Vdss): 60V
  • Current (Id) @ 25°C: 120A (Tc)
  • Rds On (Max) @ 10V: 2.4mOhm @ 100A
  • Gate Charge (Qg) @ 10V: 270 nC
  • Input Capacitance (Ciss) @ 25Vds: 21900 pF
  • Mounting: Through-hole
  • Package/Case: TO-220-3
  • Operating Temperature: -55°C to 175°C (TJ)
  • ECCN: EAR99
  • REACH: Unaffected
  • Also Known As: SP001028780, INFINFIPP120N06S4H1AKSA2

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