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Same model may have multiple batches, images only for reference.
IPP22N03S4L15AKSA1 Real Image
Same model may have multiple batches, images only for reference.

IPP22N03S4L15AKSA1

Part No IPP22N03S4L15AKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 22A TO220-3
Datasheet
IPP22N03S4L15AKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 10μA
Max Gate Charge 14nC @ 10V
Max Input Capacitance 980pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 31W (Tc)
Maximum Rds On at Id,Vgs 14.9 mOhm @ 22A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3-1
Dimension TO-220-3
Win Source Part Number 1045987-IPP22N03S4L15AKSA1
Popularity Medium
Supply and Demand Status Balance
Quantity per package 500
Ultra Librarian 3D Model Ultra Librarian IPP22N03S4L15AKSA1 CAD Model

Description

The Infineon Technologies 1045987-IPP22N03S4L15AKSA1 is a N-Channel MOSFET with a maximum power dissipation of 31W (Tc) and a drain-source breakdown voltage of 30V.

  • Continuous Drain Current @ 25°C: 22A (Tc)
  • Gate-Source Threshold Voltage: 2.2V @ 10μA
  • Maximum Gate Charge: 14nC @ 10V
  • Maximum Input Capacitance: 980pF @ 25V
  • Maximum Rds On: 14.9 mOhm @ 22A, 10V
  • Case/Package: PG-TO220-3-1
  • Dimensions: TO-220-3
  • Category: Discrete Semiconductor Products
  • Status: obsolete (EOL)

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