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Same model may have multiple batches, images only for reference.
IPP50R190CEXKSA1 Real Image
Same model may have multiple batches, images only for reference.

IPP50R190CEXKSA1

Part No IPP50R190CEXKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description IPP50R190 - 500V, 0.19OHM, N-CHA  /  N-Channel 500 V 18.5A (Tc) 127W (Tc) Through Hole PG-TO220-3
Datasheet
IPP50R190CEXKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series CoolMOS™ CE
Package Bulk
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 18.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 13V
Rds On (Max) @ Id, Vgs 190mOhm @ 6.2A, 13V
Vgs(th) (Max) @ Id 3.5V @ 510µA
Gate Charge (Qg) (Max) @ Vgs 47.2 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1137 pF @ 100 V
Power Dissipation (Max) 127W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3
Package / Case TO-220-3
MSL Level Vendor Undefined
REACH Status REACH Unaffected
Other Names 2156-IPP50R190CEXKSA1-448
Standard Package 1
Win Source Part Number 998990-IPP50R190CEXKSA1
Ultra Librarian 3D Model Ultra Librarian IPP50R190CEXKSA1 CAD Model

Description

The Infineon Technologies CoolMOS™ CE IPP50R190CEXKSA1 is an N-Channel MOSFET transistor with a drain to source voltage of 500 V and a continuous drain current of 18.5A @ 25°C.

  • Rds On: 190mOhm @ 6.2A and 13V
  • Maximum Vgs(th): 3.5V @ 510μA
  • Power Dissipation: 127W @ Tc
  • Mounting Type: Through Hole
  • REACH Compliance: Unaffected
  • ECCN: EAR99

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