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IPP50R520CP

Part No IPP50R520CP
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series CoolMOS™
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 7.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 520mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 680 pF @ 100 V
Power Dissipation (Max) 66W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3-1
Package / Case TO-220-3
Standard Package 408 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 603646-IPP50R520CP
Ultra Librarian 3D Model Ultra Librarian IPP50R520CP CAD Model

Description

The 603646-IPP50R520CP is a single N-channel MOSFET transistor from Infineon Technologies.

  • Series: CoolMOS™
  • Drain to Source Voltage (Vdss): 500V
  • Continuous Drain Current (Id) @ 25°C: 7.1A
  • Maximum On-Resistance (Rds On): 520mOhm @ 3.8A and 10V
  • Gate-Source Threshold Voltage (Vgs(th)): 3.5V @ 250µA
  • Maximum Power Dissipation: 66W
  • Mounting: Through-Hole
  • Package: TO-220-3
  • Gate Charge (Qg): 17nC @ 10V
  • Input Capacitance (Ciss): 680pF @ 100V
  • Operating Temperature Range: -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $1.0310 $61.8600
120+ $0.9646 $115.7520
190+ $0.9313 $176.9470
270+ $0.8648 $233.4960
350+ $0.8315 $291.0250
435+ $0.7983 $347.2605
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,500 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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