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Same model may have multiple batches, images only for reference.
IPP50R520CPHKSA1 Real Image
Same model may have multiple batches, images only for reference.

IPP50R520CPHKSA1

Part No IPP50R520CPHKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 550V 7.1A TO-220
Datasheet
IPP50R520CPHKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 550V
Continuous Drain Current at 25°C 7.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 250μA
Max Gate Charge 17nC @ 10V
Max Input Capacitance 680pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 66W (Tc)
Maximum Rds On at Id,Vgs 520 mOhm @ 3.8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3-1
Dimension TO-220-3
Win Source Part Number 110506-IPP50R520CPHKSA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPP50R520CPHKSA1 CAD Model

Description

The Infineon Technologies IPP50R520CPHKSA1 is a N-channel MOSFET transistor with a drain-source breakdown voltage of 550V and a continuous drain current of 7.1A (Tc).

  • Manufacturer: Infineon Technologies
  • Polarity: N-channel
  • Drain-Source Breakdown Voltage: 550V
  • Continuous Drain Current: 7.1A (Tc)
  • Maximum Rds On @ Id,Vgs: 520 mOhm @ 3.8A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Package: PG-TO220-3-1
  • Mounting: through hole
  • Product Category: discrete semiconductor products
  • Power Dissipation: 66W (Tc)
  • Drive Voltage: 10V
  • Gate-Source Threshold Voltage: 3.5V @ 250μA
  • Maximum Gate Charge: 17nC @ 10V
  • Maximum Input Capacitance: 680pF @ 100V

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11+ $11.4368 $125.8048
16+ $11.0799 $177.2784
22+ $10.7219 $235.8818
28+ $10.3650 $290.2200
38+ $9.2920 $353.0960
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