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Same model may have multiple batches, images only for reference.
IPP65R045C7XKSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IPP65R045C7XKSA1

Part No IPP65R045C7XKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 46A TO-220-3 / Trans MOSFET N-CH 650V 46A 3-Pin(3+Tab) TO-220 Tube
Datasheet
IPP65R045C7XKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series CoolMOS C7
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 650V
Current - Continuous Drain (Id) @ 25°C 46A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 1.25mA
Gate Charge (Qg) (Maximum) @ Vgs 93nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 4340pF @ 400V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 227W (Tc)
Rds On (Maximum) @ Id, Vgs 45 mOhm @ 24.9A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package PG-TO-220-3
Package TO-220-3
Win Source Part Number 776914-IPP65R045C7XKSA1
Popularity Medium
Supply and Demand Status Limited
Family Name IPP65R045C7
ECCN EAR99
Country of Origin Malaysia
Halogen Free Compliant
Estimated EOL Date 2029
Ultra Librarian 3D Model Ultra Librarian IPP65R045C7XKSA1 CAD Model

Description

The Infineon Technologies MOSFET, IPP65R045C7XKSA1, is a through-hole mounting style electronic component that operates in the -55°C to 150°C temperature range.

  • Continuous Drain Current: 46A (Tc) @ 25°C
  • Package: TO-220-3
  • Technology: CoolMOS C7
  • Voltage Gate-Source Threshold: 4V @ 1.25mA
  • Gate Charge: 93nC @ 10V
  • Drain-Source Voltage: 650V
  • Maximum Power Dissipation: 227W (Tc)
  • Input Capacitance: 4340pF @ 400V
  • Rds On: 45 mOhm @ 24.9A, 10V

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