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Same model may have multiple batches, images only for reference.
IPP65R125C7 Real Image
Same model may have multiple batches, images only for reference.

IPP65R125C7

Part No IPP65R125C7
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description IPP65R125 - 650V AND 700V COOLMO
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series CoolMOS™
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 125mOhm @ 8.9A, 10V
Vgs(th) (Max) @ Id 4V @ 440µA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1670 pF @ 400 V
Power Dissipation (Max) 101W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3-1
Package / Case TO-220-3
Standard Package 1 pcs
ECCN EAR99
HTSUS 8542.39.0001
Win Source Part Number 603664-IPP65R125C7
Ultra Librarian 3D Model Ultra Librarian IPP65R125C7 CAD Model

Description

The 603664-IPP65R125C7 is an N-channel MOSFET transistor from Infineon Technologies.

  • Series: CoolMOS™
  • Vdss: 650V
  • Id: 18A @ 25°C
  • Rds On (Max): 125mOhm @ 8.9A and 10V
  • Qg: 35nC @ 10V
  • Ciss: 1670pF @ 400V
  • Operating Temperature: -55°C to 150°C
  • Mounting Style: Through-Hole
  • Package: TO-220-3

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Pricing & Ordering

Quantity Unit Price Ext. Price
11+ $4.8362 $53.1982
26+ $3.9682 $103.1732
40+ $3.8442 $153.7680
54+ $3.7202 $200.8908
70+ $3.5962 $251.7340
94+ $3.2241 $303.0654
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,800 pieces
MOQ: 11 pcs
Order Increment : 1 pcs
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