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IPP65R280C6

Part No IPP65R280C6
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description POWER FIELD-EFFECT TRANSISTOR, 6
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series CoolMOS™
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 13.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 280mOhm @ 4.4A, 10V
Vgs(th) (Max) @ Id 3.5V @ 440µA
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 950 pF @ 100 V
Power Dissipation (Max) 104W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3-1
Package / Case TO-220-3
Standard Package 1 pcs
HTSUS 0000.00.0000
Win Source Part Number 603666-IPP65R280C6
Ultra Librarian 3D Model Ultra Librarian IPP65R280C6 CAD Model

Description

The IPP65R280C6 is an N-Channel MOSFET transistor from Infineon Technologies.

  • Series: CoolMOS™
  • Drain to Source Voltage (Vdss): 650V
  • Continuous Drain Current (Id): 13.8A @ 25°C
  • On-Resistance (Rds On): 280mOhm @ 4.4A, 10V
  • Mounting: Through-hole
  • Package: TO-220-3
  • Gate Charge (Qg): 45nC @ 10V
  • Input Capacitance (Ciss): 950pF @ 100V
  • Operating Temperature Range: -55°C to 150°C
  • Applications: Power supply, lighting, and motor control

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.4465 $50.6275
85+ $1.1869 $100.8865
135+ $1.1498 $155.2230
180+ $1.1127 $200.2860
235+ $1.0757 $252.7895
315+ $0.9644 $303.7860
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 145 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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