The Infineon Technologies IPP65R600E6XKSA1 is a N-Channel MOSFET with a drain-source breakdown voltage of 650V and a continuous drain current of 7.3A at 25°C.

• Drain-Source Breakdown Voltage: 650V
• Continuous Drain Current: 7.3A @ 25°C
• Power Dissipation: 63W (Tc)
• Package: PG-TO-220-3
• Status: active
• Popularity: medium
• Maximum Rds On at Id,Vgs: 600 mOhm @ 2.1A, 10V
• Gate-Source Threshold Voltage: 3.5V @ 210μA
• Maximum Gate Charge: 23nC @ 10V
• Maximum Input Capacitance: 440pF @ 100V
• Maximum Gate-Source Voltage: ±20V
• Temperature Range: -55°C to 150°C (TJ)
• Supply and demand status: sufficient