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IPP70N04S406AKSA1

Part No IPP70N04S406AKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 70A TO220-3-1
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 26μA
Max Gate Charge 32nC @ 10V
Max Input Capacitance 2550pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 58W (Tc)
Maximum Rds On at Id,Vgs 6.5 mOhm @ 70A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3-1
Dimension TO-220-3
Win Source Part Number 1046024-IPP70N04S406AKSA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IPP70N04S406AKSA1 CAD Model

Description

The Infineon Technologies IPP70N04S406AKSA1 is a MOSFET technology-based discrete semiconductor product that is designed for use in electronic devices.

  • Maximum Power Dissipation: 58W (Tc)
  • Drain-Source Breakdown Voltage: 40V
  • Maximum Rds On: 6.5 mOhm @ 70A, 10V
  • Gate-Source Threshold Voltage: 4V @ 26μA
  • Mounting Technology: Through-Hole
  • Packaging: Tube/Rail

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.6299 $65.1960
90+ $1.3374 $120.3660
135+ $1.2956 $174.9060
185+ $1.2538 $231.9530
240+ $1.2120 $290.8800
320+ $1.0866 $347.7120
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,040 pieces
In Stock: 3,040 pieces Factory Stock: 3,000 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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