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Same model may have multiple batches, images only for reference.
IPP80N06S2L11AKSA2 Real Image
Same model may have multiple batches, images only for reference.

IPP80N06S2L11AKSA2

Part No IPP80N06S2L11AKSA2
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 80A TO220-3
Datasheet
IPP80N06S2L11AKSA2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 2V @ 93μA
Max Gate Charge 80nC @ 10V
Max Input Capacitance 2075pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 158W (Tc)
Maximum Rds On at Id,Vgs 10.7 mOhm @ 40A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3-1
Dimension TO-220-3
Win Source Part Number 137339-IPP80N06S2L11AKSA2
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPP80N06S2L11AKSA2 CAD Model

Description

The IPP80N06S2L11AKSA2 is a N-Channel MOSFET transistor, manufactured by Infineon Technologies.

  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 80A (Tc)
  • Maximum Rds On: 10.7 mOhm @ 40A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Gate Charge: 80nC @ 10V
  • Designed for: High voltage, high speed power switching applications
  • Popularity: Medium
  • Supply and demand status: Limited
  • Suitable for: Use in applications such as power supplies, motor control, and lighting systems

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Quantity Unit Price Ext. Price
13+ $4.5472 $59.1136
31+ $3.7307 $115.6517
48+ $3.6140 $173.4720
67+ $3.4973 $234.3191
86+ $3.3818 $290.8348
115+ $3.0319 $348.6685
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MOQ: 13 pcs
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