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IPP80N08S207AKSA1

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Part No	IPP80N08S207AKSA1
Manufacturer	Infineon Technologies
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 75V 80A TO220-3 / N-Channel 75 V 80A (Tc) 300W (Tc) Through Hole PG-TO220-3-1
Datasheet	IPP80N08S207AKSA1 Datasheet
Sample
Rohs State
ECAD Module
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Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr	Infineon Technologies
Series	OptiMOS™
Package	Tube
Product Status	Not For New Designs
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	75 V
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	7.4mOhm @ 80A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	180 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4700 pF @ 25 V
Power Dissipation (Max)	300W (Tc)
Temperature Range - Operating	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO220-3-1
Package / Case	TO-220-3
Base Product Number	IPP80N08
MSL Level	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	2156-IPP80N08S207AKSA1,SP000219040,IPP80N08S2-07,IPP80N08S2-07-ND,INFINFIPP80N08S207AKSA1
Standard Package	500
Win Source Part Number	1065314-IPP80N08S207AKSA1
Ultra Librarian 3D Model	Ultra Librarian IPP80N08S207AKSA1 CAD Model

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Description

The Infineon Technologies IPP80N08S207AKSA1 is an OptiMOS™ N-Channel MOSFET designed for use in various applications such as power supplies, motor control, and welding equipment.

Maximum Drain to Source Voltage: 75 V
Maximum Continuous Drain Current: 80A (Tc)
Low On-Resistance: 7.4mOhm @ 80A, 10V
Gate Charge: 180 nC @ 10 V
Package: TO-220-3
Supplier Device Package: PG-TO220-3-1
ECCN: EAR99
RoHS Status: REACH unaffected

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