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IPP80R1K2P7XKSA1

Part No IPP80R1K2P7XKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 4.5A TO220-3 / N-Channel 800 V 4.5A (Tc) 37W (Tc) Through Hole PG-TO220-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series CoolMOS™ P7
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.2Ohm @ 1.7A, 10V
Vgs(th) (Max) @ Id 3.5V @ 80µA
Gate Charge (Qg) (Max) @ Vgs 11 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 300 pF @ 500 V
Power Dissipation (Max) 37W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3
Package / Case TO-220-3
Base Product Number IPP80R1
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 2156-IPP80R1K2P7XKSA1-448,SP001644606
Standard Package 50
Win Source Part Number 1184679-IPP80R1K2P7XKSA1
Ultra Librarian 3D Model Ultra Librarian IPP80R1K2P7XKSA1 CAD Model

Description

The IPP80R1K2P7XKSA1 is a CoolMOS™ P7 N-channel MOSFET that comes in a TO-220-3 package.

  • MOSFET Type: N-Channel
  • Drain to Source Voltage: 800V
  • Continuous Drain Current: 4.5A (Tc)
  • On-Resistance (Max) @ Id, Vgs: 1.2Ohm @ 1.7A and 10V
  • Gate Threshold Voltage: 3.5V @ 80μA
  • Gate Charge: 11nC @ 10V
  • Input Capacitance: 300pF @ 500V
  • Operating Temperature: -55°C to 150°C
  • Package: TO-220-3

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Pricing & Ordering

Quantity Unit Price Ext. Price
13+ $4.1264 $53.6432
30+ $3.3858 $101.5740
46+ $3.2800 $150.8800
64+ $3.1742 $203.1488
82+ $3.0684 $251.6088
110+ $2.7510 $302.6100
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 500 pieces
MOQ: 13 pcs
Order Increment : 1 pcs
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