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IPP90N04S402AKSA1

Part No IPP90N04S402AKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 90A TO220-3-1
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 95μA
Max Gate Charge 118nC @ 10V
Max Input Capacitance 9430pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 150W (Tc)
Maximum Rds On at Id,Vgs 2.5 mOhm @ 90A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3-1
Dimension TO-220-3
Win Source Part Number 1046046-IPP90N04S402AKSA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPP90N04S402AKSA1 CAD Model

Description

The Infineon Technologies IPP90N04S402AKSA1 is a MOSFET with N-channel polarity.

  • Category: Discrete Semiconductor Products
  • Status: Obsolete (EOL)
  • Package: PG-TO220-3-1
  • Mounting Type: Through Hole
  • Maximum Power Dissipation: 150W (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Temperature Range: -55°C to 175°C (TJ)
  • Maximum Drain-Source Breakdown Voltage: 40V
  • Maximum Continuous Drain Current @ 25°C: 90A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 95μA
  • Maximum Gate Charge: 118nC @ 10V
  • Maximum Input Capacitance: 9430pF @ 25V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id, Vgs: 2.5 mOhm @ 90A, 10V

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