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Same model may have multiple batches, images only for reference.
IPS05N03LB G Real Image
Same model may have multiple batches, images only for reference.

IPS05N03LB G

Part No IPS05N03LB G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 90A IPAK
Datasheet
IPS05N03LB G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 40μA
Max Gate Charge 25nC @ 5V
Max Input Capacitance 3200pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 94W (Tc)
Maximum Rds On at Id,Vgs 5 mOhm @ 60A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO251-3
Dimension TO-251-3 Stub Leads, IPak
Win Source Part Number 1046060-IPS05N03LB G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPS05N03LB G CAD Model

Description

The Infineon Technologies IPS05N03LB G is a N-channel polarity MOSFET.

  • Mounting Type: Through Hole
  • Case/Package: PG-TO251-3
  • Leads: TO-251-3 stub leads, IPak dimension
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 90A (Tc)
  • Maximum Rds On: 5 mOhm @ 60A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Input Capacitance: 3200pF @ 15V
  • Maximum Gate Charge: 25nC @ 5V
  • Maximum Power Dissipation: 94W (Tc)
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Category: Discrete Semiconductor Products
  • Lifecycle Status: Obsolete (EOL)
  • Supply and Demand Status: Balanced

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