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Same model may have multiple batches, images only for reference.
IPS06N03LA Real Image
Same model may have multiple batches, images only for reference.

IPS06N03LA

Part No IPS06N03LA
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 50A IPAK
Datasheet
IPS06N03LA Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 40μA
Max Gate Charge 22nC @ 5V
Max Input Capacitance 2653pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 83W (Tc)
Maximum Rds On at Id,Vgs 5.9 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO251-3
Dimension TO-251-3 Stub Leads, IPak
Win Source Part Number 069091-IPS06N03LA
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPS06N03LA CAD Model

Description

The Infineon Technologies IPS06N03LA MOSFET is a high-performance N-channel transistor designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 25V
  • Continuous Drain Current: 50A @ 25°C
  • Package: PG-TO251-3
  • Power Dissipation: 83W (Tc)
  • Drive Voltage: 4.5V and 10V
  • Gate-Source Voltage: ±20V
  • Gate-Source Threshold Voltage: 2V @ 40μA
  • Gate Charge: 22nC @ 5V
  • Input Capacitance: 2653pF @ 15V
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Status: Obsolete (EOL)
  • Popularity: Medium

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