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Same model may have multiple batches, images only for reference.
IPU050N03L G Real Image
Same model may have multiple batches, images only for reference.

IPU050N03L G

Part No IPU050N03L G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 50A IPAK
Datasheet
IPU050N03L G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 31nC @ 10V
Max Input Capacitance 3200pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 68W (Tc)
Maximum Rds On at Id,Vgs 5 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO251-3
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1046098-IPU050N03L G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPU050N03L G CAD Model

Description

The Infineon Technologies IPU050N03L G is an N-channel MOSFET that is designed for high-speed switching applications.

  • Maximum Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 50A @ 25°C
  • Gate-Source Threshold Voltage: 2.2V @ 250μA
  • Maximum Gate Charge: 31nC @ 10V
  • Maximum Rds On: 5 mOhm @ 30A and 10V
  • Operating Temperature: -55°C to 175°C
  • Package: PG-TO251-3
  • Status: Discontinued
  • Popularity: Medium

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