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Same model may have multiple batches, images only for reference.
IPU09N03LA Real Image
Same model may have multiple batches, images only for reference.

IPU09N03LA

Part No IPU09N03LA
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 50A TO-251
Datasheet
IPU09N03LA Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 20μA
Max Gate Charge 13nC @ 5V
Max Input Capacitance 1642pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 63W (Tc)
Maximum Rds On at Id,Vgs 8.8 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO251-3
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 58703-IPU09N03LA
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPU09N03LA CAD Model

Description

The Infineon Technologies 58703-IPU09N03LA is a N-Channel MOSFET with a Drain-Source Breakdown Voltage of 25V and a Continuous Drain Current of 50A (Tc) @ 25°C.

  • Maximum Rds On: 8.8 mOhm @ 30A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Package: PG-TO251-3
  • Suitable for: Use in Discrete Semiconductor Products
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Power Dissipation: 63W (Tc)
  • Supply and Demand Status: Balance

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35+ $8.3229 $291.3015
47+ $7.4625 $350.7375
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