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IPUH6N03LAG

Part No IPUH6N03LAG
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 50A IPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 30μA
Max Gate Charge 19nC @ 5V
Max Input Capacitance 2390pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 71W (Tc)
Maximum Rds On at Id,Vgs 6.2 mOhm @ 50A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO251-3
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 069109-IPUH6N03LAG
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPUH6N03LAG CAD Model

Description

The Infineon Technologies electronic component with Win Source Part Number 069109-IPUH6N03LAG is a N-Channel MOSFET with a power dissipation of 71W (Tc).

  • Case/Package: PG-TO251-3
  • Drain-Source Breakdown Voltage: 25V
  • Continuous Drain Current: 50A (Tc)
  • Gate-Source Threshold Voltage: 2V @ 30μA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds on at Id,Vgs: 6.2 mOhm @ 50A, 10V
  • Mounting: Through a hole
  • Temperature Range: -55°C to 175°C (TJ)

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