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Same model may have multiple batches, images only for reference.
IPW60R075CP Infineon Technologies
Same model may have multiple batches, images only for reference.

IPW60R075CP

Part No IPW60R075CP
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 39A TO-247
Datasheet
IPW60R075CP Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 39A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 1.7mA
Max Gate Charge 116nC @ 10V
Max Input Capacitance 4000pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 313W (Tc)
Maximum Rds On at Id,Vgs 75 mOhm @ 26A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO247-3
Dimension TO-247-3
Win Source Part Number 205252-IPW60R075CP
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPW60R075CP CAD Model

Description

The Infineon Technologies 205252-IPW60R075CP is an N-channel MOSFET with a drain-source breakdown voltage of 650V and a maximum continuous drain current of 39A @ 25°C.

  • Maximum Rds On at Id, Vgs: 75 mOhm @ 26A and 10V
  • Mounting: Through a hole
  • Packaging: Tube/rail
  • Power Dissipation: 313W (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Category: Discrete Semiconductor Products
  • Gate-Source Threshold Voltage: 3.5V @ 1.7mA
  • Maximum Gate Charge: 116nC @ 10V
  • Maximum Input Capacitance: 4000pF @ 100V
  • Component Status: Active
  • Temperature Range: -55°C to 150°C (TJ)
  • Case/Package: PG-TO247-3
  • Supply and Demand Status: Limited

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40+ $8.7052 $348.2080
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