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IPW60R099C7

Part No IPW60R099C7
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 22A TO247
Sample
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series CoolMOS™ C7
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 22A (Tc)
Rds On (Max) @ Id, Vgs 99mOhm @ 9.7A, 10V
Vgs(th) (Max) @ Id 4V @ 490µA
Gate Charge (Qg) (Max) @ Vgs 42 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1819 pF @ 400 V
FET Feature -
Power Dissipation (Max) 110W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO247
Package / Case TO-247-3
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1378637-IPW60R099C7
Ultra Librarian 3D Model Ultra Librarian IPW60R099C7 CAD Model

Description

The IPW60R099C7 is a power MOSFET transistor manufactured by Infineon Technologies.

  • Series: CoolMOS C7
  • Package: TO-247-3
  • Channel Type: N-Channel
  • Drain-to-Source Voltage (Vdss): 600 V
  • Continuous Drain Current (Id): 22A @ 25°C
  • On-Resistance (Rds On): 99mOhm @ 9.7A and 10V
  • Gate Charge (Qg): 42 nC @ 10V
  • Gate-Source Voltage (Vgs): ±20V
  • Input Capacitance (Ciss): 1819 pF @ 400V
  • Power Dissipation: 110W
  • Mounting Type: Through-Hole
  • REACH: Unaffected

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Pricing & Ordering

Quantity Unit Price Ext. Price
14+ $3.7101 $51.9414
29+ $3.4752 $100.7808
45+ $3.3578 $151.1010
65+ $3.1230 $202.9950
84+ $3.0056 $252.4704
104+ $2.8882 $300.3728
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Availability: 1,111 pieces
MOQ: 14 pcs
Order Increment : 1 pcs
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