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IPW60R099P7XKSA1

Part No IPW60R099P7XKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 31A TO247-3  /  N-Channel 600 V 31A (Tc) 117W (Tc) Through Hole PG-TO247-3
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series CoolMOS™ P7
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 99mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id 4V @ 530µA
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1952 pF @ 400 V
Power Dissipation (Max) 117W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO247-3
Package / Case TO-247-3
Base Product Number IPW60R099
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names SP001647038
Standard Package 30
Win Source Part Number 1001225-IPW60R099P7XKSA1
Ultra Librarian 3D Model Ultra Librarian IPW60R099P7XKSA1 CAD Model

Description

The IPW60R099P7XKSA1 is a N-channel MOSFET (Metal Oxide) transistor from the CoolMOS™ P7 series.

  • Vdss: 600 V
  • Id: 31A (Tc) @ 25°C
  • Rds On: 99mOhm @ 10.5A and 10V Vgs
  • Vgs(th): 4V @ 530μA
  • Power Dissipation: 117W (Tc)
  • Package: Through hole TO-247-3
  • Gate Charge (Qg): 45 nC @ 10V
  • Input Capacitance (Ciss): 1952 pF @ 400Vds
  • Maximum Gate-Source Voltage: ±20V
  • Temperature Range: -55°C to 150°C (TJ)
  • REACH: Unaffected
  • ECCN: EAR99

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Pricing & Ordering

Quantity Unit Price Ext. Price
22+ $2.3236 $51.1192
46+ $2.1765 $100.1190
72+ $2.1030 $151.4160
103+ $1.9559 $201.4577
133+ $1.8824 $250.3592
166+ $1.8089 $300.2774
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 47,130 pieces
MOQ: 22 pcs
Order Increment : 1 pcs
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