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Same model may have multiple batches, images only for reference.
IPW60R160P6FKSA1 Real Image
Same model may have multiple batches, images only for reference.

IPW60R160P6FKSA1

Part No IPW60R160P6FKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V TO247-3
Datasheet
IPW60R160P6FKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 23.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 750μA
Max Gate Charge 44nC @ 10V
Max Input Capacitance 2080pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 176W (Tc)
Maximum Rds On at Id,Vgs 160 mOhm @ 9A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO247-3
Dimension TO-247-3
Win Source Part Number 1046109-IPW60R160P6FKSA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPW60R160P6FKSA1 CAD Model

Description

The Infineon Technologies 1046109-IPW60R160P6FKSA1 MOSFET is a through-hole mounting N-Channel polarity component that is part of the Discrete Semiconductor Products category.

  • Power Dissipation: 176W (Tc)
  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 23.8A (Tc) @ 25°C
  • Maximum Rds On @ Id,Vgs: 160 mOhm @ 9A, 10V
  • Gate-Source Threshold Voltage: 4.5V @ 750μA
  • Maximum Gate Charge: 44nC @ 10V
  • Status: active
  • Packaging: tube/rail
  • Temperature Range: -55°C to 150°C (TJ)
  • Popular Choice: due to its high performance and reliability

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62+ $2.8364 $175.8568
85+ $2.7449 $233.3165
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146+ $2.3788 $347.3048
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