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IPW60R190E6FKSA1

Name: IPW60R190E6FKSA1
Brand: Infineon Technologies
SKU: 1325378
Availability: InStock
Rating: 4.84 (5 reviews)

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Part No	IPW60R190E6FKSA1
Manufacturer	Infineon Technologies
Catalog	Transistors - FETs, MOSFETs - RF
Description	IPW60R190 - 600V COOLMOS N-CHANN / N-Channel 600 V 20.2A (Tc) 151W (Tc) Through Hole PG-TO247-3-1
Datasheet	IPW60R190E6FKSA1 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer	Infineon Technologies
Packaging	Bulk
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	190mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id	3.5V @ 630µA
Gate Charge (Qg) (Max) @ Vgs	63 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1400 pF @ 100 V
Power Dissipation (Max)	151W (Tc)
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting	Through Hole
Supplier Device Package	PG-TO247-3-1
Case / Package	TO-247-3
Moisture Sensitivity Level (MSL)	Vendor Undefined
REACH Status	REACH Unaffected
Other Part Number	2156-IPW60R190E6FKSA1-448
Standard Package	1
Win Source Part Number	1325378-IPW60R190E6FKSA1
Ultra Librarian 3D Model	Ultra Librarian IPW60R190E6FKSA1 CAD Model

Description

The IPW60R190E6FKSA1 is an N-channel MOSFET transistor from Infineon Technologies.

Vdss: 600V
Id: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V
Qg (Max) @ Vgs: 63 nC @ 10 V
Ciss (Max) @ Vds: 1400 pF @ 100 V
Operating Temperature Range: -55°C to 150°C (TJ)
Package: PG-TO247-3-1

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
8+	$6.5396	$52.3168
17+	$6.1257	$104.1369
26+	$5.9188	$153.8888
37+	$5.5049	$203.6813
48+	$5.2979	$254.2992
59+	$5.0910	$300.3690

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 2,400 pieces

MOQ: 8 pcs

Order Increment : 1 pcs

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Shipped from	HK warehouse
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