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Same model may have multiple batches, images only for reference.
IPW60R280C6 Real Image
Same model may have multiple batches, images only for reference.

IPW60R280C6

Part No IPW60R280C6
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 13.8A TO247
Datasheet
IPW60R280C6 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 13.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 430μA
Max Gate Charge 43nC @ 10V
Max Input Capacitance 950pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 104W (Tc)
Maximum Rds On at Id,Vgs 280 mOhm @ 6.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO247-3
Dimension TO-247-3
Win Source Part Number 040656-IPW60R280C6
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPW60R280C6 CAD Model

Description

The Infineon Technologies 040656-IPW60R280C6 is a N-channel MOSFET that features a drain-source breakdown voltage of 600V.

  • Continuous Drain Current: 13.8A @ 25°C
  • Maximum Rds On: 280 mOhm @ Id,Vgs of 6.5A, 10V
  • Package: PG-TO247-3
  • Maximum Gate-Source Voltage: ±20V
  • Power Dissipation: 104W (Tc)
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Suitable for: Discrete semiconductor products

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Pricing & Ordering

Quantity Unit Price Ext. Price
23+ $2.5271 $58.1233
56+ $2.0744 $116.1664
87+ $2.0097 $174.8439
119+ $1.9439 $231.3241
154+ $1.8792 $289.3968
206+ $1.6851 $347.1306
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Availability: 1,930 pieces
MOQ: 23 pcs
Order Increment : 1 pcs
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