The IPW65R150CFD is a CoolMOS™ CFD7 series power MOSFET from Infineon Technologies. This MOSFET is designed for resonant switching topologies, offering high efficiency and reliability in power electronic applications. With Infineon's advanced superjunction technology, the CFD7 series provides a fast body diode and optimized switching characteristics, making it ideal for applications requiring soft switching and high-power density.

Applications

• Server Power Supplies: Used in server power supplies to provide efficient and reliable power conversion.
• Telecom Power Supplies: Employed in telecom power supplies for high-performance and stable operation.
• LED Lighting: Utilized in LED lighting systems to control and regulate power efficiently.
• Solar Inverters: Integrated into solar inverters for converting DC power to AC power with high efficiency.
• Inductive Heating: Used in inductive heating systems for efficient power delivery.

Features

• CoolMOS™ CFD7 Technology: Leverages Infineon's advanced CoolMOS™ CFD7 technology for superior performance.
• Fast Body Diode: Features a fast body diode with low reverse recovery charge (Qrr), minimizing switching losses.
• Low On-State Resistance (RDS(on)): Exhibits a low RDS(on) of 0.15 Ohms, reducing conduction losses and improving efficiency.
• High Avalanche Ruggedness: Designed with high avalanche ruggedness for reliable operation under transient conditions.
• Optimized for Resonant Switching: Specifically optimized for resonant switching topologies like LLC converters.

Benefits

• High Efficiency: The combination of CoolMOS™ CFD7 technology, a fast body diode, and low RDS(on) ensures high efficiency in power conversion.
• Improved Reliability: High avalanche ruggedness and robust design contribute to improved reliability in demanding applications.
• Reduced Switching Losses: The fast body diode minimizes switching losses, leading to higher efficiency and lower operating temperatures.
• Increased Power Density: The low RDS(on) facilitates higher power density designs, reducing the size and cost of power supplies.
• Simplified Design: Optimized for resonant switching topologies, simplifying design and reducing component count.

Additional Details

The IPW65R150CFD has a breakdown voltage (VDS) of 650V, an on-state resistance (RDS(on)) of 0.15 Ohms, and a continuous drain current (ID) of 20.7A. It is packaged in a PG-TO247. This MOSFET is ideal for applications requiring high efficiency, reliability, and power density, particularly in resonant switching power supplies.