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IPW65R190C6

Name: IPW65R190C6
Brand: Infineon Technologies
SKU: 921367
Availability: InStock
Rating: 4.85 (5 reviews)

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Part No	IPW65R190C6
Manufacturer	Infineon Technologies
Catalog	Transistors - FETs, MOSFETs - RF
Description	N-CHANNEL POWER MOSFET
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr	Infineon Technologies
Series	CoolMOS™
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	190mOhm @ 7.3A, 10V
Vgs(th) (Max) @ Id	3.5V @ 730µA
Gate Charge (Qg) (Max) @ Vgs	73 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1620 pF @ 100 V
Power Dissipation (Max)	151W (Tc)
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO247-3-41
Package / Case	TO-247-3
Standard Package	1 pcs
MSL Level	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Win Source Part Number	921367-IPW65R190C6
Ultra Librarian 3D Model	Ultra Librarian IPW65R190C6 CAD Model

Description

The 921367-IPW65R190C6 is a high voltage N-Channel MOSFET transistor from the CoolMOS™ series by Infineon Technologies.

Usage: Discrete semiconductor products, specifically in FETs and MOSFETs
Drain to Source Voltage (Vdss): 650V
Continuous Drain Current (Id): 20.2A @ 25°C
On-Resistance (Rds On): 190mOhm @ 7.3A and 10V
Gate Charge (Qg): 73 nC @ 10V
Input Capacitance (Ciss): 1620 pF @ 100V
Mounting Type: Through-hole
Package: TO-247-3
Operating Temperature Range: -55°C to 150°C
Status: Active

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