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Same model may have multiple batches, images only for reference.
IR2118PBF Real Image
Same model may have multiple batches, images only for reference.

IR2118PBF

Part No IR2118PBF
Manufacturer Infineon Technologies
Catalog PMIC - Gate Drivers
Description IC MOSFET DRIVER HIGH-SIDE 8-DIP
Datasheet
IR2118PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Integrated Circuits
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Driven Configuration High-Side
Channel Type Single
Number of Drivers 1
Gate Type IGBT, N-Channel MOSFET
Supply Voltage - Operating 10 V to 20 V
Logic Voltage - VIL, VIH 6V, 9.5V
Current - Peak Output (Source, Sink) 250mA, 500mA
Input Type Inverting
High Side Voltage - Max (Bootstrap) 600V
Rise and Fall Time 80ns, 40ns
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting Through Hole
Case / Package 8-DIP
Win Source Part Number 1046155-IR2118PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IR2118PBF CAD Model

Description

The Infineon Technologies IR2118PBF is a single channel high-side driver designed for use with IGBT and N-Channel MOSFET gate drivers.

  • Manufacturer: Infineon Technologies
  • Part Number: IR2118PBF
  • Channel Configuration: Single Channel
  • Application: High-Side Driver for IGBT and N-Channel MOSFET
  • Mounting Type: Through Hole
  • Package: Tube/Rail
  • Input Type: Inverting
  • Driven Configuration: High-Side
  • Logic Voltage: 6V to 9.5V
  • Peak Output Current: 250mA and 500mA
  • Maximum Bootstrap Voltage: 600V
  • Operating Temperature: -40°C to 150°C (TJ)
  • Supply Voltage: 10V to 20V
  • Rise Time: 80ns
  • Fall Time: 40ns

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