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IRF1010ESTRLPBF

Part No IRF1010ESTRLPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 84A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 84A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 130nC @ 10V
Max Input Capacitance 3210pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 200W (Tc)
Maximum Rds On at Id,Vgs 12 mOhm @ 50A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 017407-IRF1010ESTRLPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF1010ESTRLPBF CAD Model

Description

The Infineon Technologies MOSFET is a high-performance N-channel power transistor designed for use in discrete semiconductor products.

  • Power Dissipation (Max): 200W (Tc)
  • Drain-Source Breakdown Voltage: 60V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Max Rds On at Id,Vgs: 12 mOhm @ 50A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Input Capacitance: 3210pF @ 25V
  • Package: D2PAK
  • Packaging: Reel - TR
  • Mounting: SMD (SMT)
  • Temperature Range: -55°C to 175°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
25+ $2.0374 $50.9350
60+ $1.6717 $100.3020
93+ $1.6195 $150.6135
128+ $1.5672 $200.6016
166+ $1.5150 $251.4900
221+ $1.3583 $300.1843
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,660 pieces
MOQ: 25 pcs
Order Increment : 1 pcs
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