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Same model may have multiple batches, images only for reference.
AUIRF3205Z Real Image
Same model may have multiple batches, images only for reference.

AUIRF3205Z

Part No AUIRF3205Z
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 75A TO220AB
Datasheet
AUIRF3205Z Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 110nC @ 10V
Max Input Capacitance 3450pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 170W (Tc)
Maximum Rds On at Id,Vgs 6.5 mOhm @ 66A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1020709-AUIRF3205Z
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian AUIRF3205Z CAD Model

Description

The Infineon Technologies AUIRF3205Z is an N-Channel MOSFET that features a drain-source breakdown voltage of 55V, a continuous drain current of 75A at 25°C, and a maximum power dissipation of 170W.

  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 75A @ 25°C
  • Maximum Power Dissipation: 170W
  • Package: TO-220AB
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Rds On: 6.5 mOhm @ 66A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
8+ $6.6638 $53.3104
19+ $5.4678 $103.8882
29+ $5.2969 $153.6101
40+ $5.1260 $205.0400
51+ $4.9552 $252.7152
68+ $4.4426 $302.0968
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Availability: 18,000 pieces
MOQ: 8 pcs
Order Increment : 1 pcs
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