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Same model may have multiple batches, images only for reference.
IRF1010EZLPBF
Same model may have multiple batches, images only for reference.

IRF1010EZLPBF

Part No IRF1010EZLPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 75A TO-262
Datasheet
IRF1010EZLPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 100μA
Max Gate Charge 86nC @ 10V
Max Input Capacitance 2810pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 140W (Tc)
Maximum Rds On at Id,Vgs 8.5 mOhm @ 51A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-262
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 040670-IRF1010EZLPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF1010EZLPBF CAD Model

Description

The Infineon Technologies IRF1010EZLPBF is an N-Channel MOSFET technology electronic component with a maximum power dissipation of 140W (Tc) and a continuous drain current of 75A (Tc) @ 25°C.

  • Mounting: Through-hole
  • Packaging: Tube/rail
  • Supply and Demand: Balanced
  • Halogen-Free: Compliant

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.7295 $60.5325
85+ $1.4192 $120.6320
130+ $1.3748 $178.7240
175+ $1.3305 $232.8375
225+ $1.2861 $289.3725
305+ $1.1531 $351.6955
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,100 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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