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IRF1104STRL

Part No IRF1104STRL
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 100A D2PAK
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 93nC @ 10V
Max Input Capacitance 2900pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.4W (Ta), 170W (Tc)
Maximum Rds On at Id,Vgs 9 mOhm @ 60A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1046396-IRF1104STRL
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF1104STRL CAD Model

Description

The IRF1104STRL is a N-Channel MOSFET transistor manufactured by Infineon Technologies.

  • Maximum Power Dissipation: 2.4W (Ta), 170W (Tc)
  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 100A (Tc)
  • Maximum Gate Charge: 93nC @ 10V
  • Maximum Rds On: 9 mOhm @ 60A, 10V
  • Maximum Input Capacitance: 2900pF @ 25V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Packaging: D2PAK
  • Lifecycle Status: Obsolete(EOL)

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Pricing & Ordering

Quantity Unit Price Ext. Price
20+ $2.9315 $58.6300
49+ $2.4054 $117.8646
75+ $2.3303 $174.7725
103+ $2.2550 $232.2650
133+ $2.1799 $289.9267
178+ $1.9544 $347.8832
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Availability: 20,000 pieces
MOQ: 20 pcs
Order Increment : 1 pcs
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