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Same model may have multiple batches, images only for reference.
IRF1104S Real Image
Same model may have multiple batches, images only for reference.

IRF1104S

Part No IRF1104S
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 100A D2PAK
Datasheet
IRF1104S Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 93nC @ 10V
Max Input Capacitance 2900pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.4W (Ta), 170W (Tc)
Maximum Rds On at Id,Vgs 9 mOhm @ 60A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1046395-IRF1104S
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRF1104S CAD Model

Description

The IRF1104S is an N-channel MOSFET transistor from Infineon Technologies.

  • Power Dissipation: 2.4W (Ta), 170W (Tc)
  • Drive Voltage: 10V
  • Package Type: D2PAK
  • Operating Temperature: -55°C to 175°C
  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 100A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Max Gate Charge: 93nC @ 10V
  • Max Input Capacitance: 2900pF @ 25V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On: 9 mOhm @ 60A, 10V
  • Lifecycle Status: Obsolete (EOL)
  • Popularity: Medium

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105+ $3.3160 $348.1800
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