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Same model may have multiple batches, images only for reference.
IRF1324S-7P Infineon Technologies
Same model may have multiple batches, images only for reference.

IRF1324S-7P

Part No IRF1324S-7P
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 24V 240A D2PAK-7
Datasheet
IRF1324S-7P Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 24V
Continuous Drain Current at 25°C 240A (Tc)
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 252nC @ 10V
Max Input Capacitance 7700pF @ 19V
Maximum Rds On at Id,Vgs 1 mOhm @ 160A, 10V
Mounting SMD (SMT)
Case / Package D2PAK (7-Lead)
Dimension TO-263-7, D2Pak (6 Leads + Tab)
Win Source Part Number 205288-IRF1324S-7P
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF1324S-7P CAD Model

Description

The Infineon Technologies IRF1324S-7P is an N-channel MOSFET that comes in a D2PAK (7-Lead) package.

  • Drain-Source Breakdown Voltage: 24V
  • Continuous Drain Current: 240A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 252nC @ 10V
  • Maximum Input Capacitance: 7700pF @ 19V
  • Maximum Rds On: 1 mOhm @ 160A, 10V
  • Ideal for: use in various discrete semiconductor applications

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