The SPA11N80C3XKSA1 is a high-voltage CoolMOS™ power MOSFET from Infineon Technologies. It is designed for high-efficiency switching applications and features a low on-state resistance (RDS(on)), making it ideal for power supplies, lighting, and industrial applications. This MOSFET provides excellent performance and reliability in demanding environments.

Applications

• Switched-mode power supplies (SMPS)
• Power factor correction (PFC) circuits
• DC-DC converters
• Electronic ballasts for lighting
• Motor control

Features

• CoolMOS™ C3 Technology
• Low on-state resistance (RDS(on))
• High blocking voltage (800V)
• Low gate charge (Qg)
• Fast switching speed
• Robust body diode
• Avalanche rated

Benefits

• High efficiency
• Reduced power losses
• Simplified thermal management
• Improved system reliability
• Increased power density
• Lower component count

Technical Specifications

• Drain-Source Voltage (VDS): 800V
• Gate-Source Voltage (VGS): ±20V
• Continuous Drain Current (ID): 11A
• Pulsed Drain Current (IDM): 33A
• On-State Resistance (RDS(on)): 0.29 Ω (typical)
• Gate Charge (Qg): 22 nC (typical)
• Operating Temperature Range: -55°C to +150°C
• Package: TO-220

The SPA11N80C3XKSA1 CoolMOS™ power MOSFET offers excellent performance for high voltage and high efficiency switching applications. Its low on-state resistance reduces conduction losses, while its fast switching speed minimizes switching losses. The robust body diode and avalanche rating enhance the device's reliability in harsh operating conditions. This MOSFET is commonly used in a wide range of power electronic applications.