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Same model may have multiple batches, images only for reference.
IRF2804 Real Image
Same model may have multiple batches, images only for reference.

IRF2804

Part No IRF2804
Manufacturer Infineon Technologies
Catalog FETs - Single
Description HEXFET Power MOSFET | MOSFET N-CH 40V 75A TO-220AB
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 40V
Id - Continuous Drain Current 75A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 2.3mOhm at 75A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 240nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 6450pF at 25V
Power Dissipation (Maximum) 330W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package TO-220AB
Manufacturer Package TO-220-3
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1186930-IRF2804
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Power Management
Ultra Librarian 3D Model Ultra Librarian IRF2804 CAD Model

Description

The IRF2804 is a N-channel MOSFET transistor manufactured by Infineon Technologies. The IRF2804 is manufactured by Infineon Technologies.

  • Supply and Demand Status: Balanced
  • Applications: Power Management
  • Maximum Vds: 40V
  • Continuous Drain Current: 75A
  • Maximum Rds On: 2.3mOhm @ 75A and 10V
  • Gate Source Voltage(th): 4V @ 250μA
  • Gate Charge (Qg): 240nC @ 10V
  • Input Capacitance (Ciss): 6450pF @ 25V
  • Operating Temperature Range: -55°C to 175°C

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