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Same model may have multiple batches, images only for reference.
IRF2807L Real Image
Same model may have multiple batches, images only for reference.

IRF2807L

Part No IRF2807L
Manufacturer Infineon Technologies
Catalog FETs - Single
Description HEXFET Power MOSFET | MOSFET N-CH 75V 82A TO-262
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 75V
Id - Continuous Drain Current 82A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 13mOhm at 43A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 160nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 3820pF at 25V
Power Dissipation (Maximum) 230W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package TO-262
Manufacturer Package TO-262-3 Long Leads, I2Pak, TO-262AA
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1186939-IRF2807L
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF2807L CAD Model

Description

The IRF2807L is a N-Channel MOSFET transistor manufactured by Infineon Technologies.

  • Maximum Drain-Source Breakdown Voltage: 75V
  • Continuous Drain Current: 82A
  • On-State Resistance: 13 mOhms
  • Gate-Source Threshold Voltage: 4V
  • Package: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Suitable for: Power supplies and motor control circuits

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