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IRF3000PBF
Same model may have multiple batches, images only for reference.

IRF3000PBF

Part No IRF3000PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 300V 1.6A 8-SOIC
Datasheet
IRF3000PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 300V
Continuous Drain Current at 25°C 1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 33nC @ 10V
Max Input Capacitance 730pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 400 mOhm @ 960mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 069260-IRF3000PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF3000PBF CAD Model

Description

The Infineon Technologies IRF3000PBF is an N-channel MOSFET that comes in an 8-SO case/package.

  • Mounting Style: surface mountable
  • Maximum Power Dissipation: 2.5W (Ta)
  • Drain-Source Breakdown Voltage: 300V
  • Continuous Drain Current: 1.6A (Ta) @ 25°C
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds On: 400 mOhm @ 960mA, 10V
  • Availability: in the open market
  • Supply and Demand Status: balanced
  • Status: obsolete

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.4418 $64.8810
110+ $1.1831 $130.1410
170+ $1.1461 $194.8370
235+ $1.1091 $260.6385
305+ $1.0722 $327.0210
405+ $0.9612 $389.2860
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Availability: 10,700 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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