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Same model may have multiple batches, images only for reference.
IRF3315PBF
Same model may have multiple batches, images only for reference.

IRF3315PBF

Part No IRF3315PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 23A TO-220AB
Datasheet
IRF3315PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 95nC @ 10V
Max Input Capacitance 1300pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 94W (Tc)
Maximum Rds On at Id,Vgs 70 mOhm @ 12A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 017423-IRF3315PBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF3315PBF CAD Model

Description

The Infineon Technologies IRF3315PBF is a N-Channel MOSFET transistor, designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 94W (Tc)
  • Drain-Source Breakdown Voltage: 150V
  • Continuous Drain Current: 23A (Tc) @ 25°C
  • Maximum Rds On: 70 mOhm @ 12A, 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Max Gate Charge: 95nC @ 10V
  • Package: TO-220AB case
  • Mounting Type: through hole
  • Technology: MOSFET
  • Polarity: N-Channel
  • Temperature Range: -55°C to 175°C (TJ)
  • Supply and Demand Status: limited

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