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IRF3315SPBF

Part No IRF3315SPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 21A D2PAK
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 95nC @ 10V
Max Input Capacitance 1300pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.8W (Ta), 94W (Tc)
Maximum Rds On at Id,Vgs 82 mOhm @ 12A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1046442-IRF3315SPBF
Family Name IRF3315
Introduction Date August 24, 2004
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date Obsolete
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF3315SPBF CAD Model

Description

The Infineon Technologies IRF3315SPBF is a N-Channel MOSFET used in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 150V
  • Continuous Drain Current @ 25°C: 21A (Tc)
  • Maximum Power Dissipation: 3.8W (Ta) and 94W (Tc)
  • Package: D2PAK
  • Package: Tube/Rail
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Supply and Demand Status: balanced
  • Manufacturer: Infineon Technologies

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.8602 $51.6120
145+ $0.7059 $102.3555
220+ $0.6838 $150.4360
305+ $0.6617 $201.8185
395+ $0.6397 $252.6815
525+ $0.5735 $301.0875
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,100 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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