IRF3315SPBF

Part No IRF3315SPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 21A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 95nC @ 10V
Max Input Capacitance 1300pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.8W (Ta), 94W (Tc)
Maximum Rds On at Id,Vgs 82 mOhm @ 12A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1046442-IRF3315SPBF
Family Name IRF3315
Introduction Date August 24, 2004
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date Obsolete
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Alternative Parts
(Cross-Reference)
MTB29N15ET4;  MTB29N15E;  FDB2570;  

Description

The Infineon Technologies IRF3315SPBF is a N-Channel MOSFET used in discrete semiconductor products. This MOSFET has a drain-source breakdown voltage of 150V, a continuous drain current at 25°C of 21A (Tc), and a maximum power dissipation of 3.8W (Ta) and 94W (Tc). The package is a D2PAK, and the device is available in a tube/rail package. The operating temperature range is -55°C to 175°C (TJ). The supply and demand status is balanced.

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Pricing & Ordering (USD)

Quantity Unit Price Ext. Price
60+ $0.8670 $52.0200
145+ $0.7120 $103.2400
220+ $0.6890 $151.5800
300+ $0.6670 $200.1000
390+ $0.6450 $251.5500
520+ $0.5780 $300.5600
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
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Availability: 2,088 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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