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Same model may have multiple batches, images only for reference.
IRF3315STRLPBF
Same model may have multiple batches, images only for reference.

IRF3315STRLPBF

Part No IRF3315STRLPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 21A D2PAK
Datasheet
IRF3315STRLPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 95nC @ 10V
Max Input Capacitance 1300pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.8W (Ta), 94W (Tc)
Maximum Rds On at Id,Vgs 82 mOhm @ 12A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 106996-IRF3315STRLPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF3315STRLPBF CAD Model

Description

The Infineon Technologies IRF3315STRLPBF is an N-channel MOSFET used in a variety of applications.

  • Maximum Drain-Source Breakdown Voltage: 150V
  • Maximum Rds On: 82 mOhm @ 12A and 10V
  • Operating Temperature: -55°C to 175°C
  • Benefit: popular choice among engineers due to its balance of performance and affordability

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.8602 $51.6120
145+ $0.7059 $102.3555
220+ $0.6838 $150.4360
305+ $0.6617 $201.8185
395+ $0.6397 $252.6815
525+ $0.5735 $301.0875
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,250 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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