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IRF3315STRLPBF

Name: IRF3315STRLPBF
Brand: Infineon Technologies
SKU: 159466
Availability: InStock
Rating: 4.77 (3 reviews)

Part No	IRF3315STRLPBF
Manufacturer	Infineon Technologies
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 150V 21A D2PAK
Datasheet	IRF3315STRLPBF Datasheet
Sample
Rohs State
ECAD Module
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Products specifications

SnapMagic 3D Model
Categories	Discrete Semiconductor Products
Manufacturer	Infineon Technologies
Packaging	Reel - TR
Status	Active
Polarity	N-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	150V
Continuous Drain Current at 25°C	21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Gate-Source Threshold Voltage	4V @ 250μA
Max Gate Charge	95nC @ 10V
Max Input Capacitance	1300pF @ 25V
Maximum Gate-Source Voltage	±20V
Power Dissipation (Max)	3.8W (Ta), 94W (Tc)
Maximum Rds On at Id,Vgs	82 mOhm @ 12A, 10V
Temperature Range - Operating	-55°C to 175°C (TJ)
Mounting	SMD (SMT)
Case / Package	D2PAK
Dimension	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number	106996-IRF3315STRLPBF
Popularity	Medium
Supply and Demand Status	Balance

Description

The Infineon Technologies IRF3315STRLPBF is an N-channel MOSFET used in a variety of applications. It has a maximum drain-source breakdown voltage of 150V and a maximum Rds On of 82 mOhm at 12A and 10V. It is designed to operate in a temperature range of -55°C to 175°C and is a popular choice among engineers due to its balance of performance and affordability.

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Pricing & Ordering (USD)

Quantity	Unit Price	Ext. Price
60+	$0.8670	$52.0200
145+	$0.7120	$103.2400
220+	$0.6890	$151.5800
300+	$0.6670	$200.1000
390+	$0.6450	$251.5500
520+	$0.5780	$300.5600

* The above prices does not include taxes and freight rates, which will be calculated on the order pages.

Availability: 2,090 pieces

MOQ: 60 pcs

Order Increment : 1 pcs

Qty:

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IRF3315STRLPBF

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