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Same model may have multiple batches, images only for reference.
IRF3704ZPBF
Same model may have multiple batches, images only for reference.

IRF3704ZPBF

Part No IRF3704ZPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 20V 67A 3-Pin(3+Tab) TO-220AB / MOSFET N-CH 20V 67A TO-220AB
Datasheet
IRF3704ZPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 67A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.55V @ 250μA
Max Gate Charge 13nC @ 4.5V
Max Input Capacitance 1220pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 57W (Tc)
Maximum Rds On at Id,Vgs 7.9 mOhm @ 21A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 069270-IRF3704ZPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name IRF3704
Introduction Date July 02, 2004
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian IRF3704ZPBF CAD Model

Description

The Infineon Technologies IRF3704ZPBF is an obsolete N-channel MOSFET transistor that was designed for use in electronic circuits that require high power and high efficiency.

  • Power Dissipation: 57W (Tc)
  • Continuous Drain Current: 67A (Tc) @ 25°C
  • Drain-Source Breakdown Voltage: 20V
  • Gate-Source Threshold Voltage: 2.55V @ 250μA
  • Maximum Rds On: 7.9 mOhm @ 21A and 10V
  • Package: TO-220AB
  • Market Status: open market
  • Supply and Demand: limited

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