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IRF3706LPBF

Name: IRF3706LPBF
Brand: Infineon Technologies
SKU: 604291
Availability: InStock
Rating: 4.93 (5 reviews)

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Part No	IRF3706LPBF
Manufacturer	Infineon Technologies
Catalog	FETs - Single
Description	High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use \| MOSFET N-CH 20V 77A TO-262
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Infineon Technologies
Packaging	Tube
Status	Obsolete
Transistor Polarity	N-Channel
Technology	MOSFET
Vds - Drain-Source Breakdown Voltage	20V
Id - Continuous Drain Current	77A
Drive Voltage (Max Rds On, Min Rds On)	2.8V, 10V
Rds On (Maximum) at Id, Vgs	8.5mOhm at 15A, 10V
Gate Source Voltage(th) (Maximum) at Id	2V at 250μA
Gate Charge (Qg) (Maximum) at Vgs	35nC at 4.5V
Gate Source Voltage (Maximum)	±12V
Input Capacitance (Ciss) (Maximum) at Vds	2410pF at 10V
Power Dissipation (Maximum)	88W
Temperature Range - Operating	-55°C ~ 175°C
Mounting Style	Through Hole
Supplier Device Package	TO-262
Manufacturer Package	TO-262-3 Long Leads, I2Pak, TO-262AA
Manufacturer Pack Quantity	50
MSL Level	1 (Unlimited)
Win Source Part Number	1186979-IRF3706LPBF
Manufacturer Homepage	www.irf.com
Popularity	Medium
Supply and Demand Status	Balance
Ultra Librarian 3D Model	Ultra Librarian IRF3706LPBF CAD Model

Alternative Products

Description

The Infineon Technologies IRF3706LPBF is an N-Channel MOSFET transistor with a Vds - Drain-Source Breakdown Voltage of 20V and a continuous drain current of 77A.

Drain-Source Breakdown Voltage: 20V
Continuous Drain Current: 77A
Rds On (Maximum) @ Id, Vgs: 8.5mOhm @ 15A, 10V
Gate Charge (Qg) (Maximum) @ Vgs: 35nC @ 4.5V
Mounting Type: Through Hole
Power Dissipation (Maximum): 88W
Operating Temperature Range: -55°C ~ 175°C
Package: Tube

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