The SUM100N12-14L-E3 is an N-Channel power MOSFET from Vishay, designed for high-efficiency switching applications. This device boasts a low on-resistance and gate charge, contributing to reduced power losses and improved overall system performance. It is RoHS compliant and halogen-free, aligning with environmental standards.

Applications

• Synchronous Rectification: Used in DC-DC converters to improve efficiency.
• Power Supplies: Suitable for server, telecom, and industrial power supplies.
• Motor Control: Can be implemented in various motor control circuits.
• Load Switching: Used in applications requiring efficient and reliable load switching.

Features

• N-Channel MOSFET: Offers efficient and fast switching capabilities.
• Low On-Resistance (RDS(on)): Minimizes conduction losses for improved efficiency. Specifically, RDS(on) = 14 mΩ (typical) at VGS = 10V.
• Low Gate Charge (Qg): Reduces switching losses and improves overall efficiency.
• Avalanche Rated: Provides robustness against voltage spikes.
• RoHS Compliant: Meets environmental regulations regarding hazardous substances.
• Halogen-Free: Further contributes to environmental friendliness.

Benefits

• High Efficiency: Reduced power losses due to low on-resistance and gate charge.
• Improved Thermal Performance: Allows for higher power density in applications.
• Reliable Operation: Avalanche rating ensures robustness against voltage transients.
• Environmentally Friendly: RoHS compliance and halogen-free construction.
• Simplified Design: Fast switching characteristics simplify circuit design.

Technical Specifications

The SUM100N12-14L-E3 features a drain-source voltage (VDS) of 120V and a continuous drain current (ID) of up to 100A (depending on the case temperature). Its gate-source voltage (VGS) is rated at ±20V. The device comes in a PowerPAK® SO-8 package, enabling efficient heat dissipation. The operating junction temperature ranges from -55°C to +175°C. The typical input capacitance is around 2500 pF, and the rise time is approximately 15 ns. The total gate charge is around 45 nC. This MOSFET's design is optimized for minimizing switching losses and on-state resistance. Its thermal resistance, junction-to-case, is typically around 0.5 °C/W, enabling efficient heat transfer from the die to the ambient environment when properly heatsinked.