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IRF3805LPBF

Part No IRF3805LPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 75A TO-262
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 290nC @ 10V
Max Input Capacitance 7960pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 3.3 mOhm @ 75A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-262
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 1046492-IRF3805LPBF
Family Name IRF3805
Introduction Date December 15, 2005
ECCN EAR99
Country of Origin China
Estimated EOL Date Obsolete
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF3805LPBF CAD Model

Description

The 1046492-IRF3805LPBF is an N-channel MOSFET transistor with a maximum power dissipation of 300W (Tc) and a maximum continuous drain current of 75A (Tc).

  • Manufacturer: Infineon Technologies
  • Channel Type: N-Channel
  • MOSFET Transistor: Yes
  • Maximum Power Dissipation: 300W (Tc)
  • Maximum Continuous Drain Current: 75A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 290nC @ 10V
  • Operating Temperature: -55°C to 175°C (TJ)
  • Mounting: Through-Hole
  • Drain-Source Breakdown Voltage: 55V
  • Maximum Rds On @ Id,Vgs: 3.3 mOhm @ 75A, 10V
  • Status: Obsolete (EOL)
  • Packaging: Tube/Rail
  • Supply and Demand Status: Balanced

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