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NVD4815NT4G

Part No NVD4815NT4G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 6.9A DPAK-4
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 6.9A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 11.5V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 6.6nC @ 4.5V
Max Input Capacitance 770pF @ 12V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.26W (Ta), 32.6W (Tc)
Maximum Rds On at Id,Vgs 15 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1084101-NVD4815NT4G
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Signal Processing
Ultra Librarian 3D Model Ultra Librarian NVD4815NT4G CAD Model

Description

ON Semiconductor NVD4815NT4G: An Efficient Power MOSFET Solution

The NVD4815NT4G is a high-performance Power MOSFET brought to you by ON Semiconductor, a leading provider in innovative semiconductor solutions. Designed with the latest technology, this device aims to deliver exceptional power efficiency and reliability for a wide range of applications. The NVD4815NT4G is a testament to ON Semiconductor's commitment to providing energy-friendly solutions that do not compromise on performance.

Key Features

  • Low On-Resistance: The MOSFET features a very low on-resistance (R<sub>DS(on)), which results in minimal power loss and higher efficiency during operation.
  • High Continuous Drain Current: With a high continuous drain current (I<sub>D) rating, this component can handle significant levels of current, making it suitable for demanding applications.
  • Low Threshold Voltage: The low threshold voltage (V<sub>GS(th)) ensures that the MOSFET can be easily driven and controlled, even at lower gate voltages.
  • Fast Switching Speed: Fast switching characteristics of the NVD4815NT4G enable efficient operation at high frequencies, which is crucial for power conversion applications.
  • High Temperature Operation: The device is designed to operate reliably over a wide temperature range, ensuring stability and performance even under thermal stress.

Applications

The NVD4815NT4G is versatile and can be used in various applications, including:

  • DC/DC Converters
  • Power Management Systems
  • Motor Drives
  • Computing
  • Telecommunications
  • Consumer Electronics

Product Specifications

The NVD4815NT4G is housed in a compact and robust package, ensuring it can be integrated into various designs with ease. The device specifications include a 30V drain-to-source voltage (V<sub>DS), a maximum drain current (I<sub>D) of 80A, and power dissipation (P<sub>D) of 48W. It also features a low gate charge (Q<sub>G), which contributes to its fast switching capabilities.

ON Semiconductor's NVD4815NT4G is RoHS compliant and environmentally friendly, adhering to current regulations and standards for hazardous substances. This Power MOSFET is an excellent choice for designers looking for a reliable, high-performance component that aligns with energy-conscious goals.

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.6008 $64.0320
90+ $1.3132 $118.1880
140+ $1.2728 $178.1920
190+ $1.2312 $233.9280
245+ $1.1908 $291.7460
325+ $1.0672 $346.8400
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 27,600 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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