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NSVBC847BDW1T2G

Part No NSVBC847BDW1T2G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Arrays
Description TRANS 2NPN 45V 0.1A SC88/SC70-6 / Bipolar (BJT) Transistor Array 2 NPN (Dual) 45V 100mA 100MHz 380mW Surface Mount SC-88/SC70-6/SOT-363
Datasheet
Sample
Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays
Manufacturer onsemi
Packaging Reel - TR
Transistor Type 2 NPN (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 45V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 5V
Power - Max 380mW
Frequency - Transition 100MHz
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Surface Mount
Case / Package 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88/SC70-6/SOT-363
Base Product Number NSVBC847
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Other Part Number 2156-NSVBC847BDW1T2G-OS,488-NSVBC847BDW1T2GCT,488-NSVBC847BDW1T2GTR,ONSONSNSVBC847BDW1T2G,488-NSVBC847BDW1T2GDKR,NSVBC847BDW1T2G-ND
Standard Package 3,000
Win Source Part Number 1325658-NSVBC847BDW1T2G
Ultra Librarian 3D Model Ultra Librarian NSVBC847BDW1T2G CAD Model

Description

The ON Semiconductor NSVBC847BDW1T2G is a high-performance, dual NPN bipolar transistor that offers excellent amplification and switching characteristics. This component is designed for use in a wide range of electronic applications, including signal processing, power management, and other circuits requiring a reliable transistor pair with matched characteristics.

Key Features

  • Configuration: The device features two NPN transistors in a single SOT-363 package, providing a compact solution for designs where space is at a premium.
  • Current Gain: It boasts a high current gain bandwidth product, ensuring efficient performance in amplification applications.
  • Low Voltage Operation: The transistors operate at low voltages, making them suitable for portable and battery-powered devices.
  • Matching Transistor Pairs: The matched pair configuration allows for better performance in differential amplifiers and other circuits where transistor matching is crucial.
  • Low Noise: These transistors exhibit low noise characteristics, which is essential for sensitive audio and RF applications.
  • Energy Efficient: Designed with energy efficiency in mind, the NSVBC847BDW1T2G helps in reducing power consumption in electronic circuits.

Applications

The NSVBC847BDW1T2G is versatile and can be used in various applications, including:

  • Audio amplifiers
  • Signal processing circuits
  • Switching networks
  • Power management systems
  • RF amplification
  • Voltage regulation modules

Quality and Reliability

ON Semiconductor is known for its commitment to quality, and the NSVBC847BDW1T2G is no exception. This product is manufactured to the highest standards, ensuring reliability and performance in even the most demanding conditions.

Environmental Compliance

The NSVBC847BDW1T2G is RoHS compliant and lead-free, reflecting ON Semiconductor's dedication to environmental responsibility and the safety of electronic component users.

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